Dual-colour thermal imaging with InAs/GaSb superlattices in mid-wavelength infrared spectral range
Electronics Letters（2006）
摘要
Based on type-II InAs/GaSb superlattice photodiodes, the first report of a dual-colour infrared camera with excellent NETD values<30 mK for the shortwave channel with a cutoff wavelength of 4.0 μm and <17 mK for the longwave channel with 5.0 μm cutoff is presented. The bispectral system, which offers a simultaneous and pixel-registered detection of both colours, allows remote imaging of carbon dioxide.
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关键词
indium compounds,pixel-registered colour detection,semiconductor superlattices,infrared imaging,photodiodes,inas-gasb,dual-colour infrared camera,gallium compounds,shortwave channel,iii-v semiconductors,dual-colour thermal imaging,longwave channel,image sensors,inas/gasb superlattices,remote imaging,5.0 micron,mid-wavelength infrared spectral range,bispectral system,4.0 micron,superlattice photodiodes,carbon dioxide,infrared,superlattices
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