Time-Resolved Spectroscopy and Photoassisted STM Investigations of Laser Deposited Porous Silicon

Solid State Phenomena(1997)

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摘要
Porous Si layers prepared by laser deposition are investigated using FTIR measurements and time-resolved luminescence spectroscopy. Photoluminescence spectra and time decay of the luminescence of the deposited porous Si layers is found similar to those observed for normal electrochemically etched porous Si. Surface structures of the specimens were investigated with photoassisted scanning tunneling microscopy.
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关键词
porous silicon,laser ablation,photoluminescence,STM,time-resolved spectroscopy
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