Multiple-Cell Reference Scheme for Narrow Reference Resistance Distribution in Deep Submicrometer STT-RAM.

Spin-transfer-torque random access memory (STT-RAM) has attracted much research interest because of its characteristics of nonvolatility (i.e., zero standby power) and small cell size (i.e., high density and high performance). As the technology node is scaled down, however, the sensing margin of the STT-RAM is degraded because of the increased process variation and reduced supply voltage. To impro...