Analysis and design of a 3-26 GHz low-noise amplifier in SiGe HBT technology.Prabir K. Saha,Subramaniam Shankar, Rob Schmid,Richie Mills,John D. CresslerRWS(2012)引用 12|浏览19暂无评分关键词integrated circuit,noise,gain,noise figure,low noise amplifier,heterojunction bipolar transistorAI 理解论文溯源树样例生成溯源树,研究论文发展脉络Chat Paper正在生成论文摘要