High-efficient carbon-doped InGaAs/AlGaAs/GaAs quantum well lasers

Journal of Crystal Growth, no. 1 (2004): 181-184

Cited: 3|Views7
EI

Abstract

The carbon-doping behaviors of carbon tetrabromide (CBr4) in AlxGa1−xAs material system are studied by low-pressure metal-organic chemical vapor deposition (LP-MOCVD). Doping level dependence on growth temperature, and V/III ratio is established. C-doped InGaAs/AlGaAs/GaAs separate confinement laser structure (∼940nm) are grown and demons...More

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