On the modes of evaporation of Si and dopants in vacuum epitaxy procedures

Silicon layers are grown by sublimation molecular beam epitaxy at the rate 1 μm h −1 at temperatures 500–900°C in vacuum at the pressure 10 −5 Pa. The possibility of varying the Sb concentration in the Si layers in the range from 10 15 to 10 20 cm −3 by varying the temperature of epitaxy is shown. The potentialities of different modes of vacuum evaporation of Si and dopants are analyzed.