Quantum Well-Free Nitride-Based Uv Leds Emitting At 380 Nm Quantum Well-Free Nitride-Based Uv Leds Emitting At 380 Nm

PHYSICA STATUS SOLIDI C - CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 4, NO 1(2007)

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摘要
CVD. The bare chip device shows a strong UV emission at 380 nm, with a maximum output power of 1.6 mW at 140 mA, and a junction temperature of 120 degrees C. The saturation of the external quantum efficiency (EQE) occurs at 0.5 kA/cm(2) (similar to 80 mA), a much higher value than the 10 A/cm(2) commonly reported in quantum wells (QWs) based nitride LEDs. This behavior can be accounted for by a temperature dependent non-radiative recombination rate which increases at high injection currents. (c) 2007 WILEYNCH Verlag GmbH & Co. KGaA, Weinheim.
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quantum well
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