Synchronous Non-Volatile Logic Gate Design Based on Resistive Switching Memories.
IEEE Transactions on Circuits and Systems I: Regular Papers(2014)
摘要
Emerging non-volatile memories (NVM) based on resistive switching mechanism (RS) such as STT-MRAM, OxRRAM and CBRAM etc., are under intense R&D investigation by both academics and industries. They provide high write/read speed, low power and good endurance (e.g., > 1012) beyond mainstream NVMs, which allow them to be embedded directly with logic units for computing purpose. This integration could ...
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关键词
Resistance,Logic gates,Nonvolatile memory,Switches,CMOS integrated circuits,Semiconductor device modeling,Integrated circuit modeling
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