Mechanism of IR Photoresponse in Nanopatterned InAs/GaAs Quantum Dot p-i-n Photodiodes

C. F. de Souza,Alizadeh, Azar,Nair, S.,Saveliev, Igor,M. Blumin, H. E. Ruda,D. C. Hays,V. H. Watkins,K. R. Conway,E. Braunstein

Quantum Electronics, IEEE Journal of（2010）

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摘要

We report on measurements of the infrared photo-response of InAs-based p-i-n diodes in the spectral region above 1.8 Â¿m. These photodiodes were fabricated from arrays of InAs quantum dots grown in nano-patterned template structures using a combination of block copolymer lithography and molecular beam epitaxy. The devices studied were comprised of a single layer of quantum dots. The temperature dependence of the current versus voltage for these devices is presented and discussed. Finally, a model is presented that can explain the key characteristics of the measured current versus voltage curves as a function of both temperature and applied electric field.

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关键词

III-V semiconductors,gallium arsenide,indium compounds,lithography,molecular beam epitaxial growth,nanopatterning,p-i-n photodiodes,semiconductor quantum dots,InAs-GaAs,block copolymer lithography,infrared photoresponse,key characteristics,molecular beam epitaxy,nanopatterned,quantum dot p-i-n photodiodes,quantum dots,single layer,temperature dependence,Block copolymer lithography,patterned growth of quantum dots,quantum dot mid-wave infrared detectors

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