A 32-site Neural Recording Probe Fabricated by Double-Sided Deep Reactive Ion Etching of Silicon-on-Insulator Substrates

msra(2001)

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摘要
A neural probe with a 32-site electrode array was fabricated using an all-dry Si etch based micromachining process. The fork-like probe shafts were formed by double-sided deep reactive ion etching (DRIE) of a silicon-on-insulator (SOI) sub- strate, with the buried SiO2 layer acting as an etch stop. The shafts typically had the dimensions 5 mm x 25 μm x 20 μm and a tip taper of 4°. An array of Ir electrodes, each 100 μm2, and Au conductor traces were formed by e-beam evaporation. SEM studies showed sharply defined probes and probe tips. The function was verified in bench-top measurements in s a- line. The magnitude of the electrode imped- ance was in the 1 M Ω-range @ 1 kHz, which is consistent with neural recordings.
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silicon on insulator
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