Influence of freelayer in magnetic tunnel junction on switching of submicrometer magnetoresistive random access memory arrays

Yun Ki Lee,Byong Sun Chun,Young Keun Kim,Injun Hwang,Wanjun Park,Taewan Kim,Hongseog Kim,Jangeun Lee,Won-Cheol Jeong

IEEE Transactions on Magnetics（2005）

引用 10|浏览7

暂无评分

摘要

As magnetic tunnel junction (MTJ) cells for magnetoresistive random access memory (MRAM) are reduced in size, the presence of a magnetization vortex seriously interferes with switching selectivity. We prepared 0.3 /spl mu/m/spl times/0.8 /spl mu/m, nearly rectangular shape MTJs consisted of PtMn/CoFe/Ru/CoFe/AlOx/NiFe t (t=3,4.5, and 6 nm). Both at-field and remanent state measurements at 0.4 V we...

查看译文

关键词

Magnetic tunneling,Magnetic switching,Tunneling magnetoresistance,Random access memory,Magnetic field measurement,Temperature,Metastasis,Magnetization,Writing,Materials science and technology

AI 理解论文

溯源树

样例

生成溯源树，研究论文发展脉络

Chat Paper

正在生成论文摘要