Technology scaling issues of an iddq built-in current sensor

Palm Springs, CA（2005）

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摘要

Analysis and comparison of 1.5 mum and 350 nm CMOS test chip results of a built-in current sensor design reveal several critical design issues. This paper includes a discussion of these issues. The success of the sensor design hinges on how these issues are addressed in order to achieve successful operation during technology scaling

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关键词

CMOS integrated circuits,electric sensing devices,1.5 micron,350 nm,CMOS test chip,IDDQ built-in current sensor,quiescent current testing,sensor design,technology scaling,

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