Root-Finding Methods for Assessing SRAM Stability in the Presence of Random Dopant Fluctuations

In this paper, we propose a closed-form method to evaluate the read stability of an SRAM cell via quartic root finding. By utilizing a simplified MOSFET device model, we model SRAM cell stability by a system of quartic equations. The algebraic nature of the equations along with simplified region boundaries provide the insight that only a few combinations of device operating regions correspond to t...