Root-Finding Methods for Assessing SRAM Stability in the Presence of Random Dopant Fluctuations

IEEE Transactions on Semiconductor Manufacturing, pp. 22-30, 2009.

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Keywords:
Random access memoryFluctuationsStability analysisEquationsThreshold voltageMore(5+)

Abstract:

In this paper, we propose a closed-form method to evaluate the read stability of an SRAM cell via quartic root finding. By utilizing a simplified MOSFET device model, we model SRAM cell stability by a system of quartic equations. The algebraic nature of the equations along with simplified region boundaries provide the insight that only a ...More

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