Spectral properties of proton irradiated gallium nitride blue diodes
IEEE Transactions on Nuclear Science（2001）
摘要
The permanent damage induced by 2 MeV proton irradiation at room temperature is reported for gallium nitride based blue emitting diodes (CREE model C430-DH85). Both optical and electrical device characteristics were measured. The I-V dependence was obtained as a function of temperature. At low voltages, the current is proportional to the exponential of the voltage at a constant temperature and the...
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关键词
Protons,III-V semiconductor materials,Gallium nitride,Degradation,Electroluminescence,Light emitting diodes,Optical devices,Temperature dependence,Voltage,Temperature distribution
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