Temperature Dependence Of Capacitance Of Si Quantum Dot Floating Gate Mos Capacitor
25TH INTERNATIONAL CONFERENCE ON LOW TEMPERATURE PHYSICS (LT25), PART 2(2009)
摘要
We report on the temperature dependence of the capacitance of Si-quantum dots (Si-QDs) floating gate MOS capacitor samples both in dark and under laser excitation at low temperatures. The capacitance increases with increase in temperature from 6 to 40 K and saturates at temperature higher than 40 K in dark. The capacitance under laser excitation at each gate voltage is larger than the capacitance in dark, and decreases with increase in temperature at V-g = 2 V from 6 to 180 K. This result shows that the carriers in Si-QDs play large roles in the observed temperature dependence of the capacitance.
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关键词
quantum dot
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