Impact of interfacial layer on low-frequency noise of HfSiON dielectric MOSFETs

Bigang Min,S. P. Devireddy, Z. Celik-Butler,A. Shanware,L. Colombo, K. Green,J. J. Chambers,M. R. Visokay,A. L. P. Rotondaro

IEEE Transactions on Electron Devices（2006）

引用 37|浏览6

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摘要

Low-frequency noise measurements and analysis were performed on n-channel MOSFETs with HfSiON as the gate-dielectric material. The role of SiON interfacial-layer thickness was investigated. It was observed that these fluctuations can be described by the unified flicker-noise model that attributes noise to correlated carrier-number/mobility fluctuations due to trapping states in the gate dielectric...

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关键词

MOSFETs,Dielectric materials,Charge carrier mobility,Semiconductor device noise,Random noise,Semiconductor device modeling,Hafnium compounds,Silicon compounds

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