Characteristics of GZO Films Prepared by Using a rf Magnetron Plasma at Low Temperature

Gallium doped zinc oxide (GZO) films were deposited on glass substrates without substrate heating by using a rf magnetron sputtering from a ZnO target mixed with 5 wt% Ga2O3. The structural, electrical and optical properties of the GZO films were investigated in terms of the sputtering power and pressure. The argon gas pressure and the rf power were in the ranges of 0.13 similar to 1.47 Pa and 50 similar to 100 W, respectively. An optical transmittance of the GZO film of about 90 % was maintained over the sputter pressure and the rf power ranges. However, the resistivity of the film was strongly influenced by the sputtering power and the pressure. We were able to achieve a resistivity of 1.5 x 10(-3) Omega-cm and an optical transmittance of about 90 % without substrate heating.