GaSb-based tapered diode lasers at 1.93 /spl mu/m with 1.5-W nearly diffraction-limited power

C. Pfahler,G. Kaufel,M. T. Kelemen,M. Mikulla,M. Rattunde,J. Schmitz,J. Wagner

IEEE Photonics Technology Letters（2006）

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摘要

High-power high-brightness 1.93-μm wavelength (AlGaIn)(AsSb) tapered diode lasers with a narrow vertical waveguide design are reported for the first time. A nearly diffraction-limited continuous-wave output power of 1.5 W together with a remarkable low fast axis divergence of 43/spl deg/ full-width at half-maximum have been demonstrated. The maximum brightness amounts to 32 MW/cm2sr.

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关键词

Diode lasers,Diffraction,Optical waveguides,Power generation,Brightness,Fiber lasers,Optical design,Laser beams,Waveguide lasers,Gas lasers

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