Preparation of SiO2—GeO2: Eu3+ planar waveguides and characterization by waveguide Raman and luminescence spectroscopies

SiO2-GeO2 planar waveguides, doped with EU3+ ions, have been prepared using the dip-coating technique. Optical characterization of the waveguides has been performed by m-line spectroscopy. The structural modification occurring during the densification process has been followed by waveguide Raman and luminescence spectroscopies. A strong rearrangement in the glass occurs after annealing at 900 degrees C and the final structure appears more ordered.