Deoxygenation of Y-Ba-Cu-O thin films by reactive ion implantation

Applied Superconductivity, IEEE Transactions(1997)

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摘要
Thin films of YBa/sub 2/Cu/sub 3/O/sub 7/ (YBCO), grown by pulsed laser deposition, were implanted with Si/sup +/ ions at energies of 30,60, and 90 keV and at doses ranging from 1/spl times/10/sup 13/ cm/sup -2/ to 3/spl times/10/sup 11/ cm/sup -2/. X-ray diffraction techniques were used to investigate the structural dependence on implant parameters and annealing conditions, while d.c. magnetization was measured to characterize superconducting properties. By implanting only the upper portion of the film, implanted Si/sup +/ ions, near the surface, inhibit the superconductivity by removing oxygen from the bottom YBCO lattice which still retains its original crystal structure.
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关键词
X-ray diffraction,annealing,barium compounds,crystal structure,high-temperature superconductors,ion implantation,magnetisation,pulsed laser deposition,silicon,superconducting thin films,yttrium compounds,30 to 90 keV,X-ray diffraction,YBa/sub 2/Cu/sub 3/O/sub 7/:Si,annealing conditions,crystal structure,magnetization,pulsed laser deposition,reactive ion implantation,structural dependence,superconducting properties,thin films
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