Electrical Properties Of Fluorine-Doped Oxynitride Films Prepared By Photoillumination Liquid-Phase Deposition

Using an aqueous solution of hydrosilicofluoric acid, boric acid, and ammonium hydroxide, fluorine-doped oxynitride films can be deposited on a silicon substrate. The fluorine and nitrogen atoms are piled up at about 160 Angstrom from the interface. The electrical characteristics were improved by decreasing the film thickness toward 160 Angstrom due to the increase of fluorine and nitrogen concentrations. The electrical characteristics were degraded by further decreasing the film thickness from 160 to 110 Angstrom due to the interfacial nonstoichiometric oxide. The quality of fluorine-doped oxynitride films with a prepared thickness thinner than 160 Angstrom can be improved under photoillumination. Thus higher nitrogen and fluorine concentrations of the films can be obtained by photoillumination. (C) 2004 The Electrochemical Society.