Photoluminescence investigation of the carrier confining properties of multiquantum barriers

IEEE Journal of Quantum Electronics(1997)

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摘要
A comparative luminescence study of two Ga/sub 0.52/In/sub 0.48/P-(Al/sub 0.5/Ga/sub 0.5/)/sub 0.52/In/sub 0.48/P single-quantum-well (SQW) samples with bulk and multiquantum barrier (MQB) barriers is presented. When excess carriers are only created in the quantum wells (QW's) of the samples by resonant excitation using a dye laser, the luminescence efficiency of both samples as a function of temp...
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关键词
Photoluminescence,Quantum well lasers,Semiconductor lasers,Electrons,Luminescence,Interference,Microelectronics,Superlattices,Threshold current,Temperature
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