0.2 Mu M Gate Length, Non-Alloyed P+-Alinas/N-Alinas/Gainas Jhemts With F(T)=62ghz

Recently, the authors demonstrated improved breakdown characteristics in 1 mu m gate length P+-AllnAs/N-AllnAs/GalnAs JHEMTs utilising a junction to modulate the 2-DEG and regrowth of the ohmic contact regions by MOCVD. The authors present high frequency operation (f(t) and f(max) of 62 and 105 GHz respectively) of 0.2 mu m devices with high current (500mA/mm), transconductance (300mS/mm) such improved breakdown characteristics (two- and three-terminal gate breakdown voltages of 19 and 16V, respectively).