Advanced FIB preparation of semiconductor specimens for examination by off-axis electron holography

Off-axis electron holography is a TEM based technique that can be used to reconstruct phase and amplitude images of a specimen from an interference pattern that is formed by using an electron biprism. As the phase of an electron is very sensitive to changes in potential in a specimen, such as from the presence of dopants, electron holography can be used to fulfil the requirements of the semiconductor industry for a technique that can quantitatively map dopants with nm-scale resolution [1].