Growth study of chemical beam epitaxy of GaNxP1 − x using NH3 and tertiarybutylphosphine

A study in the growth of GaNxP1 − x epilayers by chemical beam epitaxy using tertiarybutylphosphine (TBP), ammonia (NH3), and elemental Ga or triethylgallium is reported. Monitoring reflection high-energy electron diffraction (RHEED) intensity oscillations, we observe that both group-III- and group-V-induced incorporation rates are increased when NH3 is introduced into a single cracker with TBP. From the difference in the periods of group-V-induced RHEED intensity oscillations, a 16% N incorporation is expected, but X-ray rocking curve measurement shows only 0.08% N. Using separate TBP and NH3 crackers results in no enhancement in incorporation rates. We conclude that the cracking efficiency of TBP is increased with NH3 co-injection.