The spray-ILGAR® (ion layer gas reaction) method for the deposition of thin semiconductor layers: Process and applications for thin film solar cells

The spray Ion Layer Gas Reaction (ILGAR) process starts with ultrasonic nebulisation of the precursor solution, e.g. InCl3/ethanol for our successful buffer material In2S3. In an aerosol assisted chemical vapour deposition (AACVD) type reaction an In(O,OH,Cl) film is deposited on a heated substrate and is subsequently converted to In2S3 by H2S gas. The cycle of these steps is repeated until the required layer thickness is obtained. The robust and reproducible process allows a wide control of composition and morphology.