Novel Total Dose and Heavy-Ion Charge Collection Phenomena in a New SiGe HBT on >Thin-Film SOI Technology

Marco Bellini,Stanley D. Phillips,Ryan M. Diestelhorst,Peng Cheng,John D. Cressler,Paul W. Marshall,Marek Turowski,GrÉgory Avenier,Alain Chantre,Pascal Chevalier

IEEE Transactions on Nuclear Science（2008）

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摘要

We investigate radiation-induced effects on the DC, AC and thermal characteristics of high-performance SiGe HBTs fabricated on thin-film SOI. TCAD simulations indicate novel heavy-ion charge collection phenomena resulting from the unique CBEBC device layout of this technology platform.

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关键词

Silicon germanium,Germanium silicon alloys,Heterojunction bipolar transistors,Silicon on insulator technology,Isolation technology,Single event upset,Radiation hardening,Space technology,Pulse width modulation,Protons

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