Radiation hardness of the HERA-B silicon microstrip detectors

Summary This paper presents results of a non-uniform irradiation of a single-sided ac-coupled p -on- n siliconstrip detector integrated ona HERA-B detector module. The fluences received by different areas of the detector wafer ranged from less than2 × 10 13 MIP/cm 2 to a maximum of 2.7 × 10 14 MIP/cm 2 which allowed a systematic study of the detector performance both in the original n -type and type-inverted regime as well as in the transition region. Charge collection efficiency, noise, leakage current and full depletion voltage were determined as a function of strip number, i.e. fluence. Full functionality of the whole detector area has been established.