In2O3–ZnO transparent conductive oxide film deposition on polycarbonate substrates

Amorphous transparent conductive oxide films in the In–Zn–O system were deposited on polycarbonate (PC) substrates by simultaneous DC sputtering of an In2O3 target and a ZnO target with either 4wt% Al2O3 or 7.5wt% Ga2O3 impurities. Although the resistivity of the amorphous, non-doped In–Zn–O film on PC was about one order of magnitude higher than that on the glass substrate, the resistivity of the In–Zn–O films with Ga2O3 impurities on PC substrates was reduced to the level of the non-doped In–Zn–O films on glass substrates. The addition of Al2O3 or Ga2O3 to the In–Zn–O films also induced the widening of the optical band gap, which would improve transparency at blue wavelengths.