Electrical Properties of Liquid Phase Deposited SiO[sub 2] on Photochemical Treated GaN

The electrical characteristics of liquid phase deposited SiO2 on GaN substrate were investigated. More Ga-OH bonds can be formed on GaN surface treated by KOH solution under a mercury arc lamp excitation. The OH bonds will absorb siloxane oligomer and enhance liquid phase deposited SiO2. A better quality of SiO2/GaN interface can be obtained and the interface state density is 1.24 x 10(12) cm(-2) eV(-1) at the energy of 0.42 eV below the edge of conduction band. The leakage current density of the metal oxide semiconductor diode can be improved from 6.98 x 10(-5) to 3.28 x 10(-6) A/cm(2) at + 1 MV/cm. (C) 2007 The Electrochemical Society.