Effect of the oxidation on the porous silicon voltage tuneable luminescence

Porous silicon luminescence can be strongly modified by the application of an external bias (energy-selective quenching of the photoluminescence, reversible voltage tuning of the cathodic electroluminescence), as the result of selective carrier injection into the silicon nanocrystallites of the porous layer. Partial oxidation of the material is shown to strongly modify this selectivity and the voltage dependence of the light emission by changing the voltage drop distribution in the material.