Optimization Of Back Channel Leakage Characteristic In Pd Soi P-Mosfet

The impact of back channel leakage (BCL) is thoroughly investigated when scaling down partially depleted (PD) silicon-on-insulator (SOI) devices. Back channel voltage is introduced as an indicator for monitoring the behavior of BCL. In addition to front-gate devices, back-gate devices also suffer from short channel effect. Finally, BCL can be successfully suppressed by optimizing process parameters such as the Si remains, the well implant, and the SOI thickness. (C) 2010 The Electrochemical Society. [DOI:10.1149/1.3459931] All rights reserved.