SiGe HBT Microprocessor Core Test Vehicle

P. M. Belemjian,O. Erdogan,R. P. Kraft,J. F. McDonald

Proceedings of the IEEE（2005）

引用 27|浏览9

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摘要

A major impediment to the continuation of Moore's Law in the years to come is the performance of interconnections in ICs at high frequencies. Microprocessors are using a greater portion of their clock cycle charging and discharging interconnections. Silicon-germanium (SiGe) heterojunction bipolar transistors (HBTs) provide a fast track technology for the exploration of the effect of interconnectio...

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关键词

Silicon germanium,Germanium silicon alloys,Heterojunction bipolar transistors,Microprocessors,Testing,Vehicles,Integrated circuit interconnections,Wire,Dielectric substrates,Dielectric losses

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