Evidence for High Vacancy Concentrations in Heavily Doped N-Type Silicon from Mossbauer Experiments

G. Weyer,M. Fanciulli,Kristian Freitag,Arne Nylandsted-Larsen, M. Lindroos,E. Müller,H. C. Vestergaard

MATERIALS SCIENCE FORUM（1995）

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摘要

Utilizing radioactive Sb-119 and Sn-119m probe atoms in isoconcentration P-doped silicon, by Sn-119 Mossbauer emission spectroscopy the formation of probe atom-vacancy complexes is observed as a function of rapid thermal annealing temperature and doping level. The results are compared to various model predictions and equilibrium vacancy concentrations are deduced.

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关键词

Mossbauer spectroscopy,ion implantation,n-type silicon,vacancy complexes

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