Offset wide-recessed In0.49GaP∕Al0.45GaAs barrier E-pHEMT with high current density

An offset wide-recessed In(0.49)AqGaP/Al0.45GaAs barrier enharicciriciltniode p-HEMT (E-pHEMT) with high drain current density has been developed, Achieving high gate-turn-on voltage and reducing source access resistance (R-S) were the aims for the high current density E-pHEMT. The wide bandgap Al0.45GaAs barrier enabled the application of high V-GS to the gate. Rs was reduced by using an In0.49GaP etch stop layer with low surface defect density and reducing the source to gate spacing (L-SG). An offset wide-recess to the E-pHEMT was Without increasing Rs. The applied to enhance breakdown voltage offset wide-recessed 0.5 mu m gate E-pHEMT showed a drain current density of 440 mA/mm at V-GS = 1.5 V and an off-state breakdown voltage of over 21 V.