GaN HFET digital circuit technology for harsh environments

T. Hussain,M. Micovic,T. Tsen,M. Delaney,D. Chow,A. Schmitz,P. Hashimoto,D. Wong,J. S. Moon,Ming Hu,J. Duvall,D. McLaughlin

Electronics Letters（2003）

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摘要

The first demonstration of GaN digital circuits is reported. First-generation GaN digital technology has already shown high yields for circuits of considerable complexity. Specifically, a 31-stage ring oscillator was implemented using 217 transistors. Properties of the AlGaN/GaN material system that enable outstanding power handling capabilities of GaN heterojunction field effect transistors (HFET...

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关键词

logic circuits,field effect transistor circuits,gallium compounds,aluminium compounds,III-V semiconductors,wide band gap semiconductors,high-temperature electronics,integrated circuit design,integrated circuit measurement

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