Monolithic Low-Noise Ampliers up to 10 GHz in Silicon and SiGe Bipolar Technologies

D Zoschg,W Wilhelm,Herbert Knapp,K Aufinger,Josef Bock,T F Meister,M Wurzer,H D Wohlmuth,A L Scholtz

european microwave conference（2000）

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摘要

The noise properties of silicon and SiGe bipolar technologies at identical de- sign rules are evaluated by theory and by ex- perimental LNAs designed for the frequen- cies of 2 GHz, 6 GHz, and 10 GHz. For a fair comparison the same circuit principle is used for all six LNAs, with gain of about 20 dB or above, suitable for the applications in wireless communications.

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关键词

circuits,parasitic capacitance,low noise amplifier,radio frequency,transistors,noise figure,wireless communication,design rules

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