Experimental Behavior And Two-Dimensional Simulations Of Mos-Transistors In Weak Inversion Region
INTERNATIONAL JOURNAL OF ELECTRONICS(1981)
摘要
The sub-threshold region of short channel MOS transistors has boon investigated through measurements and two-dimensional simulations. It is shown that the appropriate scaling of device dimensions and adequate process design can optimize the weak inversion characteristics together with other electrical parameters of short channel MOS transistors.
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关键词
process design
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