Investigation of the frequency dispersion effect in the Root-model applied to conventional and floating-gate MESFETs

S. Van Den Bosch, L. Martens

IEEE Transactions on Electron Devices(1997)

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摘要
This paper investigates measurement and modeling aspects of frequency dispersion effects for GaAs MESFETs. The well-known Root-model's ability to simulate frequency dispersion is evaluated versus measurements. We propose an alternative frequency weighting function that can easily be implemented in the MDS-system. We also investigate the validity of this approach for "floating-gate" MESFETs and pre...
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关键词
Dispersion,MESFETs,Frequency measurement,Gallium arsenide,Circuit simulation,Length measurement,Fingers,Equations,Voltage,Time measurement
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