A Computationally Stable Quasi-Empirical Compact Model for the Simulation of MOS Breakdown in ESD-protection Circuit Design
SISPAD '97 1997 International Conference on Simulation of Semiconductor Processes and Devices Technical Digest
关键词
MOSFET,avalanche breakdown,circuit analysis computing,electrostatic discharge,protection,semiconductor device models,ESD protection circuit design,MOS breakdown simulation,NMOS device,avalanche current generation,circuit-level simulation,computationally stable model,convergence properties,multiplicative factor,quasi-empirical compact model,source/drain series resistance,substrate resistance
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