An Economical Fabrication Technique For Simox Using Plasma Immersion Implantation

J Min,Pk Chu,Yc Cheng, B Liu,Ssk Iyer,Nw Cheung

Beijing（1995）

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摘要

Buried oxide layers in Si were fabricated using non-mass analyzed plasma immersion ion implantation (PIII). The implantation was carried out by applying a large negative bias to a Si wafer immersed in an oxygen plasma and a dose of 3×1017 cm-2 of oxygen was implanted in about three minutes. Cross section transmission electron microscopy (XTEM) and Rutherford backscattering spectrometry (RES) were used to characterize the wafers. Our results indicate that a continuous buried oxide layer with a single crystal silicon overlayer was synthesized

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关键词

Rutherford backscattering,SIMOX,buried layers,ion implantation,transmission electron microscopy,Rutherford backscattering spectrometry,SIMOX,Si-SiO2,buried oxide layer,cross section transmission electron microscopy,fabrication,plasma immersion ion implantation,single crystal silicon overlayer

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