A flash memory technology with quasi-virtual ground array for low-cost embedded applications

J. Tsouhlarakis,G. Vanhorebeek, G. Verhoeven,J. De Blauwe,Shiho Kim,D. Wellekens, P. Hendrickx, L. Hasp,J. Van Houdt, H. Maes

IEEE Journal of Solid-State Circuits（2001）

引用 15|浏览13

暂无评分

摘要

In this paper, the 0.35-/spl mu/m implementation of a 1-Mb embedded flash memory circuit, based on a split-gate concept, is presented. This concept provides an excellent solution for embedded applications, thanks to the very limited number of processing steps that are needed on top of a baseline CMOS process. Nevertheless, a high performance memory cell is obtained that operates with moderate volt...

查看译文

关键词

Flash memory,Circuits,Split gate flash memory cells,CMOS process,Decoding,Nonvolatile memory,Costs,Threshold voltage,System-on-a-chip,Manufacturing

AI 理解论文

溯源树

样例

生成溯源树，研究论文发展脉络

Chat Paper

正在生成论文摘要