Surface monitoring of HEMT structures

The data of Atomic Force Microscopy (AFM) surface monitoring and of mobility investigations in the HEMT structures based on the AlGaAs/InGaAs/GaAs heterostructures with pseudomorphic InGaAs channel are presented. The level of HEMT nanomaterial self-organization (LNSO) were obtained using the treatment the AFM data by the method of multifractal analysis. Direct correlation between the mobility values and LNSO was found for the most of studied HEMT structures that reflect the close relation between the LNSO values and the HEMT bulk properties. In the structures with LNSO changing from 1.13 to 1.45 the 1.5 time mobility decrease at 300 K and 4 times at 77 K was observed. The results obtained allow to suppose that the LNSO calculation based on surface monitoring of HEMT structures can be used for the optimization of their parameters and of their formation process.