Temperature-Dependent RF Small-Signal and Noise Characteristics of SOI Dynamic Threshold Voltage MOSFETs

IEEE Transactions on Microwave Theory and Techniques(2010)

引用 1|浏览7
暂无评分
摘要
In this paper, temperature-dependent RF small-signal and noise characteristics of silicon-on-insulator (SOI) dynamic threshold voltage (DT) MOSFETs are experimentally examined. In the low-voltage regime, both the cutoff and maximum oscillation frequencies (ft and fmax) tend to increase with temperature. In addition, the inherent body-related parasitics and the series resistance have much more impa...
更多
查看译文
关键词
Radio frequency,Threshold voltage,MOSFETs,Noise figure,Immune system,Silicon on insulator technology,Cutoff frequency,Temperature,Circuit noise,Degradation
AI 理解论文
溯源树
样例
生成溯源树,研究论文发展脉络
Chat Paper
正在生成论文摘要