HRXRD and Raman study of irradiation effects in InGaN/GaN layers induced by 2.3MeV Ne and 5.3MeV Kr ions

In0.15Ga0.85N/GaN bilayers irradiated with 2.3MeV Ne and 5.3MeV Kr ions at room temperature were studied by high-resolution X-ray diffraction (HRXRD) and micro-Raman scattering. The Ne ion fluences were in the range from 1×1012 to 1×1015cm−2, and the Kr ion fluences were in the range from 1×1011 to 1×1013cm−2. Results show that the structures of both In0.15Ga0.85N and GaN layers remained almost unchanged for increasing fluences up to 1×1013 and 1×1012cm−2 for Ne and Kr ion irradiations, respectively. After irradiation to higher fluences, the GaN layer was divided into several damaged layers with different extents of lattice expansion, while the In0.15Ga0.85N layer exhibited homogenous lattice expansion. The layered structure of GaN and the different responses to irradiation of the GaN and In0.15Ga0.85N layers are discussed.