Borosilicate glass and its applications in bipolar technology

M. Bianco,K. Ehinger,B. Hautke,H. Klose,H.v. Philipsborn

Microelectronic Engineering（1991）

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摘要

Borosilicate glass (SiOB) and its outdiffusion properties were investigated. The outdiffusion of boron can be controlled by using an intermediate oxide layer. Borosilicate glass can be used to realize sub 100 nm base widths for bipolar transistors. By using SiOB instead of TEOS for the spacer of PSA transistors, the base link is improved.

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关键词

bipolar transistors,annealing,bipolar transistor,ion implantation,microelectronics,boron,cmos technology,glass,silicon,etching,temperature

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