A 64 X 32bit 4-Read 2-Write Low Power And Area Efficient Register File In 65 Nm Cmos

IEICE Electronic Express(2012)

引用 8|浏览16
暂无评分
摘要
This paper details the design of a 64 x 32 bit 4-read 2-write register file in TSMC 65 nm LP process. The register file avoids cell banking with pseudo-differential sensing scheme. Moreover, this approach enables a fully shareable and completely symmetry cell layout which shows competitive area results. Non-full-swing technique is proposed to avoid over design and improve energy efficiency. As for the timing control module, clocked pull-down circuit cuts off a possible short-current path at high clock frequency. A prototype is implemented in TSMC 65 nm LP technology. The measured results demonstrate operation of 0.77 GHz, consuming 7.08 mW at 1.2V, and occupying 0.018 mm(2).
更多
查看译文
关键词
register file, 65 nm, pseudo-differential sensing, low power, area efficient
AI 理解论文
溯源树
样例
生成溯源树,研究论文发展脉络
Chat Paper
正在生成论文摘要