Exploring sub-20nm FinFET design with predictive technology models
DAC（2012）
摘要
Predictive MOSFET models are critical for early stage design-technology co-optimization and circuit design research. In this work, Predictive Technology Model files for sub-20nm multi-gate transistors have been developed (PTM-MG). Based on MOSFET scaling theory, the 2011 ITRS roadmap and early stage silicon data from published results, PTM for FinFET devices are generated for 5 technology nodes corresponding to the years 2012-2020 on the ITRS roadmap.
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关键词
exploring sub-20nm finfet design,sub-20nm multi-gate transistor,finfet device,predictive technology model,early stage design-technology co-optimization,predictive mosfet model,published result,predictive technology model file,early stage silicon data,itrs roadmap,circuit design research,mosfet scaling theory,circuit design,predictive models,integrated circuit design,capacitance,prediction model,logic gates
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