Growth of Crystal Silicon Films from Chlorinated Silanes by RF Plasma-Enhanced Chemical Vapor Deposition
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS(2001)
摘要
Low-temperature growth of crystal silicon films is demonstrated from chlorinated silane, i.e., SiH2Cl2. SiHCl3 and SiCl4, with hydrogen dilution by a RF glow-discharge method. Low-temperature crystallization is significantly enhanced on amorphous substrates such as glass from the initial growth stage in all systems. In the SiH2Cl2 system, however, the film crystallinity strongly depends on deposition parameters, i.e., substrate temperature, T-s, and the flow rate of hydrogen, Fr(H-2). On the other hand, it is almost independent of T-s and Fr(H-2) in the SiCl4 system. This difference originates from the chemical reactivity of deposition precursors and the corresponding surface reaction. Low-temperature crystallization from SiH2Cl2 and SiCl4 systems is discussed through studies on the film growth combined with the in situ monitoring of the surface reaction using Fourier transform infrared reflection absorption spectroscopy (FTIR-RAS).
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关键词
SiH2Cl2,SiCl4,PE-CVD,surface reaction,FTIR-RAS,microcrystalline silicon,GD-OES
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