Transient Analysis Of Complementary Mos Ic Inverter

A set of transient equations for rise and fall times of a complementary MOS IC inverter is developed. These equations utilize fully the device-processing parameters extracted from the fabrication technology. The current-voltage relationship of the inverter is used in developing the transients equations. An argument is presented in this analysis that takes into account the grounded substrate case and provides an accurate value of threshold voltage under strong back gate bias when the MOS transistor is in saturation. The rise and fall time equations provide the necessary information for a worst-case design. Sample calculations are also included and the results of the calculations are summarized.